inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1212 description drain current C i d =5a@ t c =25 drain source voltage- : v dss =900v(min) fast switching speed applications high voltage, high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 5 a p tot total dissipation@tc=25 80 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.56 /w r th j-a thermal resistance,junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1212 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 900 v v gs( th ) gate threshold voltage v ds = v gs ; i d =1ma 2.1 3.0 4.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =2.5a 2.0 2.5 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds =900v; v gs = 0 500 ua v sd forward on-voltage i s =5a; v gs =0 1.0 1.5 v tr rise time vgs=10v;id=2.4a; rl=50 80 120 ns ton turn-on time 110 170 ns tf fall time 120 180 ns toff turn-off time 420 630 ns pdf pdffactory pro www.fineprint.cn
|
